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When electron beam lithography must be performed on insulating substrates (e.g. Quartz, SiC, soda lime, etc.) negative charge buildup can occur on the substrate surface causing beam deflection, and thus pattern distortion.
Anti-charging methods (pdf) (ppt)
ESpacer Technical data
ESpacer Flyer
ESpacer 300Z: for use with ZEP520A, PMMA, maN-2403, and HSQ
ESpacer 300AX01: for use with chemically amplified resists
How to apply ESpacer:
1. get a disposable pipette. use compressed N2 gun on the tip of the pipette to clean it off.
2. ESpacer bottles are stored in refrigerator. Pipette out a small quantity (1mL) as it coats very easily and is very expensive ($1500 for 100mL). Make sure you have cleaned the tip of the pipette with a compressed N2 gun (step 1) to prevent contaminating the bottle with particles.
3. put bottle back in refrigerator.
4. Espacer will come to room temperature after a few minutes in pipette.
5. obtain sample that is resist coated. the resist on the sample must already be baked.
6. spin coat ESpacer at 2000 RPM, 2000 RPM/s, for 30 sec. no baking is necessary. this will create a uniform film of ESpacer on sample which is ~200 Angsroms in thickness. see ESpacer Technical data for spin curve information.
7. expose sample with EBL.
8. remove ESpacer with DI water by immersion for 1 min, then rinse off with low DI flow from faucet.
9. N2 blow dry sample.
10. perform resist develop procedure as appropriate for resist being used.
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